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S Kasiviswanathan
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S Kasiviswanathan
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S Kasiviswanathan
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Kasiviswanathan, S.
Kasiviswanathan, Subbiah
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3 results
Now showing 1 - 3 of 3
- PublicationCharacterization of silver selenide thin films grown on Cr-covered Si substrates(01-03-2009)
;Mohanty, Bhaskar Chandra ;Malar, P. ;Osipowicz, Thomas ;Murty, B. S. ;Varma, ShikhaThermal stability of silver selenide thin films formed from the solid-state reaction of Ag-Se diffusion couples on Si substrates covered with a thin Cr film, is investigated. Glancing angle X-ray diffraction (GXRD), XPS, atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) are used to characterize the as-deposited films and those annealed at 100, 200, 300, and 400 °C. The results reveal the formation of polycrystalline orthorhombic silver selenide films that remain stable without compositional change upon thermal annealing, in marked contrast to the agglomeration exhibited by silver selenide films deposited on Si without Cr film. The improvement in the thermal stability is attributed to compressive stress relief by a grainy morphology with large surface area, the formation of which is promoted by partially oxidized Cr adhesion film. © 2008 John Wiley & Sons, Ltd. - PublicationAtomic force microscopy study of thermal stability of silver selenide thin films grown on silicon(15-09-2006)
;Mohanty, Bhaskar Chandra ;Murty, B. S. ;Vijayan, V.Silver selenide thin films were grown on silicon substrates by the solid-state reaction of sequentially deposited Se and Ag films of suitable thickness. Transmission electron microscopy and particle-induced X-ray emission studies of the as-deposited films showed the formation of single phase polycrystalline silver selenide from the reaction of Ag and Se films. Atomic force microscopy images of the as-deposited and films annealed at different temperatures in argon showed the film morphology to evolve into an agglomerated state with annealing temperature. The results indicate that when annealed above 473 K, silver selenide films on silicon become unstable and agglomerate through holes generated at grain boundaries. © 2005 Elsevier B.V. All rights reserved. - PublicationMorphological changes of supported gold nanoparticles in Au\In 2O3\Si: An atomic force microscopic study(18-07-2013)
;Laha, RanjitWe present the changes in morphology of supported gold nanoparticles (AuNPs) in Au/In2O3/Si structures by atomic force microscopy (AFM) studies. In2O3 thin films were deposited over Si by direct current magnetron sputtering. This was followed by deposition of Au thin films by thermal evaporation to complete the structure Au/In 2O3/Si. Au/In2O3/Si films were annealed in oxygen ambience at different temperatures to form supported AuNPs. The AFM measurements were done on Au/In2O3/Si formed with initial mass thicknesses of Au as 3, 6, 9 and 12 nm, and annealed at 673 and 873 K. The results showed that the average heights of AuNPs formed vary linearly with initial mass thickness of Au for annealing temperature 673 K whereas appreciable deviation from the linear trend was observed for the films annealed at 873 K. © 2013 AIP Publishing LLC.