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S Kasiviswanathan
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S Kasiviswanathan
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S Kasiviswanathan
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Kasiviswanathan, S.
Kasiviswanathan, Subbiah
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7 results
Now showing 1 - 7 of 7
- PublicationCharacterization of silver selenide thin films grown on Cr-covered Si substrates(01-03-2009)
;Mohanty, Bhaskar Chandra ;Malar, P. ;Osipowicz, Thomas ;Murty, B. S. ;Varma, ShikhaThermal stability of silver selenide thin films formed from the solid-state reaction of Ag-Se diffusion couples on Si substrates covered with a thin Cr film, is investigated. Glancing angle X-ray diffraction (GXRD), XPS, atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) are used to characterize the as-deposited films and those annealed at 100, 200, 300, and 400 °C. The results reveal the formation of polycrystalline orthorhombic silver selenide films that remain stable without compositional change upon thermal annealing, in marked contrast to the agglomeration exhibited by silver selenide films deposited on Si without Cr film. The improvement in the thermal stability is attributed to compressive stress relief by a grainy morphology with large surface area, the formation of which is promoted by partially oxidized Cr adhesion film. © 2008 John Wiley & Sons, Ltd. - PublicationA comparative study of CuInSe2 and CuIn3Se 5 films using transmission electron microscopy, optical absorption and Rutherford backscattering spectrometry(15-08-2005)
;Malar, P.CuInSe2 and CuIn3Se5 films were grown by stepwise flash evaporation onto glass and Si substrates held at different temperatures. Transmission electron microscopy (TEM) studies revealed that the films grown above 370 K were polycrystalline, with CuInSe2 films exhibiting larger average grain size than CuIn3Se5. Optical absorption studies yielded band gaps of 0.97±0.02 and 1.26±0.02 eV for CuInSe2 and CuIn3Se5, respectively. Rutherford backscattering spectrometry (RBS) study of the films on Si showed that CuInSe2/Si structures included an inhomogeneous interface region consisting of Cu and Si, whereas CuIn3Se 5/Si structures presented sharp interface. © 2004 Elsevier B.V. All rights reserved. - PublicationTransmission electron microscopy and Rutherford backscattering spectrometry studies of Ag2Te films formed from Ag-Te thin film couples(01-01-2006)
;Mohanty, B. C.Formation of Ag2Te thin films from room temperature (300 K) solid state reaction of Ag and Te thin film couples is investigated. Rutherford Backscattering Spectrometry (RBS) studies confirmed the complete miscibility of the couples and the stoichiometry of the resulting Ag2Te. Structural analysis by Transmission Electron Microscopy (TEM) showed a fine-grained structure with monoclinic and orthorhombic phases. Annealing at high temperatures resulted in the growth of giant crystallites with monoclinic phase at random sites. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. - PublicationTailoring plasmonic properties of metal nanoparticle-embedded dielectric thin films: the sandwich method of preparation(01-09-2017)
;Laha, Ranjit ;Malar, P. ;Osipowicz, ThomasTailoring of plasmonic properties of metal nanoparticle-embedded dielectric thin films are very crucial for many thin film-based applications. We, herein, investigate the various ways of tuning the plasmonic positions of gold nanoparticles (AuNPs)-embedded indium oxide thin films (Au:IO) through a sequence-specific sandwich method. The sandwich method is a four-step process involving deposition of In2O3 film by magnetron sputtering in first and fourth steps, thermal evaporation of Au on to In2O3 film in second and annealing of Au/In2O3 film in the third step. The Au:IO films were characterized by x-ray diffraction, spectrophotometry and transmission electron microscopy. The size and shape of the embedded nanoparticles were found from Rutherford back-scattering spectrometry. Based on dynamic Maxwell Garnett theory, the observed plasmon resonance position was ascribed to the oblate shape of AuNPs formed in sandwich method. Finally, through experimental data, it was shown that the plasmon resonance position of Au:IO thin films can be tuned by ~ 125 nm. The method shown here can be used to tune the plasmon resonance position over the entire range of visible region for the thin films made from other combinations of metal-dielectric pair. - PublicationCharacterization of stepwise flash evaporated CuIn3Se 5 films(01-02-2005)
;Malar, P.CuIn3Se5 thin films were grown by stepwise flash evaporation from the polycrystalline powder source. Bulk CuIn3Se 5 was synthesized by melt-quench technique, starting from the stoichiometric mixture of constituent elements. Phase purity of the synthesized material was confirmed by powder X-ray diffraction. Structural investigations by transmission electron microscopy (TEM) show that the films grown at 370 K and above were polycrystalline in nature. Compositional analysis by Rutherford backscattering spectrometry (RBS) revealed that the films have near stoichiometric composition. Analysis of optical transmittarice data yielded a band gap value of ∼ 1.26 ±0.02 eV. © 2004 Elsevier B.V. All rights reserved. - PublicationGrowth and characterization of stepwise flash evaporated CuInTe2 thin films(01-02-2009)
;Ananthan, M. R.CuInTe2 films grown by stepwise flash evaporation onto glass and silicon substrates held at 573 K were studied using X-ray diffraction (XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS) and Raman spectroscopy. XRD and TEM studies showed the formation of single-phase polycrystalline CuInTe2. Results of the RBS measurements showed the films to be near-stoichiometric and negligible diffusion of elements across the CuInTe2/Si interface. Various lattice vibrational modes identified by Raman measurements were found to match well with those reported for single-crystal CuInTe2, confirming the crystalline quality of the CuInTe2 thin films. © 2008 Elsevier B.V. All rights reserved. - PublicationGrowth and ion beam study of DC sputtered indium oxide films(01-04-2005)
;Malar, P. ;Vijayan, V. ;Tyagi, A. K.Transmission electron microscopy (TEM) and ion beam techniques were used to study the DC reactively sputtered In2O3 films on Si substrates. TEM studies showed that the films are single-phase and polycrystalline. Particle induced X-ray emission (PIXE) enabled trace analysis of the films. Rutherford backscattering spectrometry (RBS) investigations suggested the formation of 20 nm thick inhomogeneous interface region between In2O3 film and Si. Secondary ion mass spectrometry (SIMS) depth profiling and current-voltage measurements confirmed the presence of the interface region. © 2004 Elsevier B.V. All rights reserved.