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Shreepad Karmalkar
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Shreepad Karmalkar
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Shreepad Karmalkar
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Karmalkar, S.
Karmalkar, Shreepad
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PublicationA Process-Parameter-Based Circuit Simulation Model for Ion-Implanted MOSFETs and MESFETs(01-01-1989); Bhat, K. N.It is shown that the equivalent box representation of implanted doping profiles, derived in terms of the process parameters by matching the charge-voltage relationships of the actual profile and the box profile, can be used for accurately simulating the electrical characteristics of surface-channel (SC) MOSFETs and MESFETs having implanted channels. © 1989 IEEE- PublicationThe Correct Equivalent Box Representation for the Buried Layer of BC MOSFET's in Terms of the Implantation Parameters(01-01-1987)
; Bhat, K. N.From the charge-voltage considerations, it is shown that the Gaussian-implanted profile of buried layers can be correctly represented by an equivalent box. The paper also shows that the average doping and the depth of this box can be obtained directly from a knowledge of the implantation parameters. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.