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    Low temperature behavior of strained-Si n-MOSFETs
    (01-12-2007)
    Mahato, S. S.
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    Maiti, T. K.
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    Chakraborty, P.
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    Mitra, D.
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    Senapati, B.
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    Sarkar, S. K.
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    Maiti, C. K.
    The performance enhancement in strained-Si n-MOSFETs are evaluated as a function of temperature. Mobility modeling at low temperature is reported. SPICE parameters are extracted for strained-Si n-MOSFETs for the first time. © 2007 IEEE.