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Anjan Chakravorty
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Anjan Chakravorty
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Anjan Chakravorty
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Chakravorty, A.
Chakravorty, Anjan
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3 results
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- PublicationCompact 2-RC Model for Lateral NQS Effects in SiGe HBTs(01-01-2022)
;Ghosh, Sandip ;Yadav, ShonA physics-based model is proposed to accurately capture the lateral non-quasi-static (LNQS) effects in SiGe HBTs. The model uses new methodology to implement the internal base impedance of the device using two-RC circuits. Equations of all base impedance related components associated with the two-RC network are derived. The proposed model is implemented in Verilog-A. The small-signal AC and the large-signal transient simulations show that the two-RC model yields significantly more accurate results when compared with those of the state-of-the-art model and the π-model. - PublicationHybrid small-signal Ï€-model for the lateral NQS effect in SiGe HBTs(08-11-2016)
;Yadav, Shon; Schroter, MichaelThe state-of-the-art and π-models for the lateral non-quasi-static (NQS) effect are analyzed. The superiority of the π-model to capture the lateral NQS effect is demonstrated through small-signal simulations of both the models, implemented in Verilog-A. A hybrid model is proposed and a corresponding formulation of the base impedance is obtained. The equation gives the base impedance of the state-of-the-art as well as the π-model under appropriate conditions. The methodology to implement the hybrid model in Verilog-A is discussed. The hybrid model shows significantly higher accuracy than both the state-of-the-art model and the π-model when compared with the device simulation data. - PublicationHybrid two-section model for the small-signal current crowding effect in SiGe HBTs(18-10-2017)
;Yadav, ShonA two-section equivalent circuit model with hybrid topology is proposed to model the base impedance of SiGe HBTs. The formulations suitable for implementation in compact-model are obtained. A simpler yet accurate method is also proposed to implement the hybrid two-section model. The models are implemented in Verilog-A and small-signal simulations are carried out. The proposed models predict the small-signal lateral NQS effect more accurately than the existing models.