Now showing 1 - 3 of 3
  • Placeholder Image
    Publication
    BEOL Thermal Resistance Extraction in SiGe HBTs
    (01-12-2022)
    Nidhin, K.
    ;
    Balanethiram, Suresh
    ;
    Nair, Deleep R.
    ;
    D'Esposito, Rosario
    ;
    Mohapatra, Nihar R.
    ;
    Fregonese, Sebastien
    ;
    Zimmer, Thomas
    ;
    A prior estimate of the impact of thermal resistance from the back-end-of-line (BEOL) metallization layers is crucial for an accurate circuit design and thermally aware device design. This article presents a robust technique to extract the thermal resistance component originating from the BEOL metal layers in silicon germanium heterojunction bipolar transistors (SiGe HBTs). The proposed technique is first tested on data generated using analytical equations and later validated with 3-D TCAD simulation. The results clearly show that the exact contribution of the BEOL to the overall thermal resistance is captured in the proposed approach. Finally, we verified the method using measured data obtained from fabricated SiGe HBT structures using Infineon B11HFC technology. The extracted parameters show reasonable accuracy and consistency across different emitter dimensions and BEOL configurations.
  • Placeholder Image
    Publication
    A Pragmatic Approach to Modeling Self-Heating Effects in SiGe HBTs
    (01-12-2017)
    Yadav, Shon
    ;
    An accurate closed-form analytical model is proposed to predict the junction temperature and thermal resistance of silicon germanium heterojunction bipolar transistors, including the effect of back-end-of-line (BEOL) metal layers. A linear approximation is used in a thermal resistivity model of silicon to reduce the model complexity. A simple method is proposed to extract the necessary model parameters along with the BEOL thermal resistance. The model is validated with the TCAD simulation, and the scalability of the model is verified by the comparison with experimental data for different device geometries. The model shows excellent agreement with both TCAD simulation (without BEOL) and experimental data (with BEOL).
  • Placeholder Image
    Publication
    Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs
    (01-03-2017)
    Balanethiram, Suresh
    ;
    D'Esposito, Rosario
    ;
    ;
    Fregonese, Sebastien
    ;
    Zimmer, Thomas
    In this brief, we propose a simple approach to extract the contribution of the back-end-of-line (BEOL) layers on the thermal resistance of heterojunction bipolar transistors (HBTs). A finite value of BEOL thermal resistance obtained following our approach confirms a non-negligible heat flow toward BEOL. The proposed extraction technique is validated with iterative solutions and measured data of silicon-germanium HBTs fabricated in the STMicroelectronics B9MW technology.