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Anjan Chakravorty
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Anjan Chakravorty
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Anjan Chakravorty
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Chakravorty, A.
Chakravorty, Anjan
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5 results
Now showing 1 - 5 of 5
- PublicationAnalytic Estimation of Thermal Resistance in HBTs(01-01-2016)
; ;D'Esposito, Rosario ;Balanethiram, Suresh ;Frégonèse, SébastienZimmer, ThomasIn this paper, we propose a new method for estimating the peak junction temperature and thermal resistance in modern heterojunction bipolar transistors (HBTs). The proposed method uses the temperature dependence of thermal conductivity of the material. The method is analytic in nature and does not require any iteration as opposed to the existing state-of-the-art model. This analytic method can easily include the available scaling relations relevant to specific technology to estimate the junction temperatures and thermal resistances of the corresponding transistors. The analytic model is tested against iterative self-consistent solutions for simple structures without any trench isolation and for structures corresponding to the ST Microelectronics B9MW technology that includes shallow and deep trench isolations. The model is slightly modified in order to include the effects from the back-end-of-line metal layers. The resulting analytic model is validated against the measured results for silicon germanium HBTs fabricated in ST Microelectronics B9MW technology. - PublicationExtracting the FEOL and BEOL components of thermal resistance in SiGe HBTs(18-10-2017)
;Balanethiram, Suresh; ;D'Esposito, Rosario ;Fregonese, SebastienZimmer, ThomasAn efficient technique to extract the front-end-of-line and back-end-of-line components of the thermal resistance in bipolar transistors is proposed. The proposed approach is tested with the numerical simulations of silicon germanium HBTs corresponding to the STMicroelectronics B9MW process. We also predict the overestimate in the conventional thermal resistance models which neglects the thermal resistance contribution from the back-end-of-line. The results of the proposed extraction technique are observed to be in agreement with the numerical simulations for different emitter geometries. - PublicationExtraction of BEOL Contributions for Thermal Resistance in SiGe HBTs(01-03-2017)
;Balanethiram, Suresh ;D'Esposito, Rosario; ;Fregonese, SebastienZimmer, ThomasIn this brief, we propose a simple approach to extract the contribution of the back-end-of-line (BEOL) layers on the thermal resistance of heterojunction bipolar transistors (HBTs). A finite value of BEOL thermal resistance obtained following our approach confirms a non-negligible heat flow toward BEOL. The proposed extraction technique is validated with iterative solutions and measured data of silicon-germanium HBTs fabricated in the STMicroelectronics B9MW technology. - PublicationAn improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs(08-11-2016)
;Balanethiram, Suresh; ;D'Esposito, Rosario ;Fregonese, SebastienZimmer, ThomasIn this paper we present an improved self-consistent iterative model for thermal resistance in SiGe HBTs. The proposed model evaluates both the upward and downward heat dissipation from the heat source located at the base-collector junction. Along with the temperature dependency, thermal conductivity degradation due to heavy doping and Ge composition in the base region is included in the proposed model. It is observed that the model accuracy is improved once these physical effects are included along with the upward heat diffusion. Scalability of the proposed model is validated with the measured data for different emitter geometries. - PublicationAccurate Modeling of Thermal Resistance for On-Wafer SiGe HBTs Using Average Thermal Conductivity(01-09-2017)
;Balanethiram, Suresh; ;D'Esposito, Rosario ;Fregonese, Sebastien ;Celi, DidierZimmer, ThomasAn accurate analytic model is proposed for estimating the junction temperature and thermal resistance in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) including the back-end-of-line (BEOL) metal layers. The model uses an average value of thermal conductivity in order to include the temperature dependence of thermal resistance. The parameters corresponding to the thermal conductivity and the BEOL thermal resistance used in the model are extracted following a recently reported methodology. The proposed model is scalable in nature and verification with experimental data shows an excellent accuracy across different emitter geometries of SiGe HBTs fabricated in STMicroelectronics B9MW technology. Compact model simulations show that the proposed model simulates around 23% faster compared with an existing state-of-the-art iterative method.