Modeling the frequency response of organic metal-insulatorsemiconductor capacitors
Substantial improvement of organic field effect transistors (OTFTs) toward circuit applications certainly demands stable device performance upon varying frequency and temperature. Organic metal-insulator-semiconductor (MIS) capacitor has been considered to be an efficient model system to predict the device performance of OTFT under the influence of frequency and temperature. In this study we show that the capacitance dispersion with respect to frequency and temperature in organic MIS capacitor device is an inherent property, which arises due to the low conductivity of the semiconductor along with Schottky type contact at the semiconductor-metal junction. In addition we propose an equivalent circuit model to explain the dispersion of capacitance with respect to frequency and temperature.
Modeling the frequency response of organic metal-insulator-semiconductor capacitors
Substantial improvement of organic field effect transistors (OTFTs) toward circuit applications certainly demands stable device performance upon varying frequency and temperature. Organic metal-insulator-semiconductor (MIS) capacitor has been considered to be an efficient model system to predict the device performance of OTFT under the influence of frequency and temperature. In this study we show that the capacitance dispersion with respect to frequency and temperature in organic MIS capacitor device is an inherent property, which arises due to the low conductivity of the semiconductor along with Schottky type contact at the semiconductor-metal junction. In addition we propose an equivalent circuit model to explain the dispersion of capacitance with respect to frequency and temperature.