Jayeeta Bhattacharyya

We combine micro-photoluminescence (PL) with terahertz excitation to investigate the response of single self-assembled InAs/GaAs quantum dots to intense terahertz pulses tuned to the s-to-p transition. Spectra and transients of single photoluminescence lines reveal the dynamics of electrons upon excitation and subsequent relaxation back into the initial state. Under certain circumstances, the terahertz pulse can release trapped charge carriers, which relax into the quantum dot. Furthermore, we demonstrate near-total depletion of the positive trion PL by an intense terahertz pulse.

4,4′-bis[(N-carbazole) styryl] biphenyl (BSB4 or BSBCz) is one of the widely studied organic fluorescent materials for blue organic electroluminescent devices in the recent times. In this work, BSB4 is used as a guest material to construct the host-guest matrix for the emissive layer (EML) of a pure blue fluorescent organic light-emitting diode (OLED). A pure blue emission suitable for display application with a Commission Internationale de l'Eclairage coordinate of (0.147,0.070) is achieved by the blue-shift of the emission spectrum of the host-guest matrix from that of the pristine guest (BSB4) molecules. The optimization of OLED structures is carried out by considering (a) charge balance in the EML for high exciton density, and (b) optical interference of generated light in the organic layers for increased light outcoupling. A thorough comparative study on the use of different combinations of widely used hole and electron transport layers to obtain charge balance in the EML of the OLED, thereby enhancing the external quantum efficiency (EQE) is shown. Optical interference effects in the fabricated OLEDs are analyzed by optical simulation of each device structure by transfer matrix method. With the optimized device structures, we are able to overcome the 2% EQE limit that has been reported so far for blue fluorescent OLEDs with BSB4 as light emitting material and achieve a maximum EQE of 4.08%, which is near to the theoretical limit of EQE for fluorescent OLEDs.

A systematic study of the photoluminescence quenching efficiencies in P3HT: PCBM blends showed a non-linear dependence on the PCBM concentration. We find a faster decrease in PL emission initially which later flattens out around 1:1 composition which tallies well with sample compositions known to give the best power conversion efficiencies. This implies that the exciton dissociation rates dominate the photocurrent generation in these films. We obtained a maximum of 91% photoluminescence quenching for films with a 1:1 blend ratio. A mean field based phenomenological model is presented, which very well describes our experimental results. The generation of free carriers due to various proposed mechanisms like dissociation and delocalization are collectively considered in the model. The model helps us understand the underlying physics and dependence of the quenching efficiency on parameters like excitation intensities. The proposed model will be useful in predicting the behaviour of exciton dissociation in new organic blends.

High response UV-blue photodiodes are fabricated with chemical vapor deposited poly(p-phenylenevinylene) (PPV) as donor and thermally evaporated C60 as acceptor. Chemical vapor deposition (CVD) has the advantage that scaling up for deposition on large area substrates is feasible. High efficiency is achieved by optimizing the device structure using the optical electric field distribution calculated from transfer matrix simulations. The photodiode operates in the 330 nm to 500 nm wavelength range (UV-A and blue) with a peak responsivity of 148 mA/W at 370 nm and 180 mA/W at 450 nm under a low bias of -1.5 V. A comparison between the photodiodes of CVD grown PPV with spin coated PPV shows that growth by CVD results in significant improvement in responsivity. The high responsivity is attributed to the optimized device geometry and enhanced hole mobility in CVD grown PPV.

The performance of organic semiconductor photodetectors depends on the choice of materials as the active layers. In this paper, we show that a 1:1 blend of PPDT2FBT-PC71BM blend gives high responsivity of about 0.33 A/W at 660 nm and is operable in the wavelength range of 350 to 720 nm. The causes for high efficiencies at low operating voltages are discussed.

In organic semiconductor-based bulk heterojunction solar cells, the presence of an acceptor increases the formation of charge-transfer (CT) excitons, thereby leading to higher exciton dissociation probabilities. In this work we used steady-state electroabsorption (EA) measurements to probe the change in the nature of excitons as the blend composition of the solar cell active layer material was varied. We investigated blends of poly[(2,5-bis(2-hexyldecyloxy)phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]thiadiazole)] (PPDT2FBT) and (6,6)-phenyl C71 butyric acid methyl ester (PCBM). Analysis of the EA spectra showed that in the presence of a fullerene-based acceptor, like PCBM, CT characteristics of the excitons were modified, though no new CT signature was observed in the blend. Enhancement in the CT characteristics in the blend was reflected in photoluminescence (PL) measurements of the blends, where PL quenching of ∼63% was observed for 1% PCBM. The quenching reaches saturation at about 20% PCBM. However, efficiency of the device increased with a PCBM percentage beyond 20%. Maximum efficiency was obtained for the blend with 50% PCBM, among the blend compositions studied in this work, indicating the optimum concentration of PCBM for best power conversion efficiency to be around that value. When we compared the experimental results with simulations, the variation of the device efficiency with PCBM percentage was shown to arise from multiple factors, such as an increase in the polarizability and dipole moment of excitons, and the efficiency of the carrier collection from the bulk of the active layer.

Optical properties of CVD grown PPV thin films were studied using absorption and photoluminescence measurements. Effects of annealing, film thickness and excitation power on the PL spectra have been investigated.

Luminescence quenching in the presence of polarons is one of the major challenges in organic light emitting devices. In this work, exciton quenching in the presence of polarons is studied using phase sensitive photocurrent measurements on pentacene field effect transistors. The enhancement of conduction in the organic field effect transistors on light illumination is studied using photocurrent spectral response measurements and corresponding optical simulations. The photocurrent is shown to be governed by the polaron mobility and the exciton quenching efficiency, both of which depend on the polaron density in the channel. Two models are proposed on the exciton dynamics in the presence of gate induced polarons in the transistor channel. The first model simulates the steady-state exciton concentration profile in the presence of exciton-polaron interaction. The second one is a three-dimensional steady state exciton-polaron interaction model, which supports the findings from the first model. It is shown that the excitons quench by transferring its energy to polarons, thereby promoting the latter to high energy states in the density of states manifold. The polarons move in the higher energy states with greater microscopic mobility before thermalizing, thereby leading to an enhancement of conduction. It is observed that for the present system, where charge carrier transport is by hopping, all polarons interact with excitons. This implies that for low mobility systems, the interaction is not limited to deep trapped polarons.

Charge (electrons and holes) balance engineering is employed to demonstrate an enhancement in the performance of organic light emitting diodes (OLEDs) fabricated with a near infra red thermally activated delayed fluorescence (TADF) molecule 7,10-Bis(4-(diphenylamino)phenyl)-2,3-dicyanopyrazino phenanthrene (TPA-DCPP). The emissive layer of the OLED comprises of a guest-host matrix. A detailed analysis of the choice of host that is to be employed in the guest-host matrix of the emissive layer of the OLED is presented. The doping concentration of the guest in the emissive layer is optimized by photoluminescence (PL) studies. A comparative analysis of 1,4,5,8,9,11-Hexaazatriphenylenehexacarbonitrile (HATCN) and Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) PEDOT: PSS as hole injection layers and their effect on device efficiency and charge balance in the emissive layer of the device stack is presented. From the study, a red TADF OLED with a maximum external quantum efficiency of 13.2% at a luminance of 1 cd/m2 is demonstrated.

Electroabsorption (EA) measurements can be used to identify the type of excitons contributing to the absorption spectra of semiconductors. However, the shape of the EA spectrum may vary depending on the mode of measurement due to the optical interference effects. Analysis without considering these effects may lead to erroneous conclusions. In this work, we present EA measurements and analysis for reflection mode measurements considering optical interference effects. We compared the inferences with transmission mode measurements and discuss the limitations. We identified the nature of excitons associated with each transition in the absorption spectrum of poly[(2,5-bis(2-hexyldecyloxy)-phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]-thiadiazole)] thin film from EA measurements. The bands at 1.89, 2.05, and 2.27 eV had a mixed nature consisting of charge transfer and Frenkel characteristics. Of these, the band at 2.05 eV showed the strongest charge transfer characteristic. From thickness dependent measurements, we showed that the interference effects increase with the thickness of the semiconductor layer. The nature of excitons, however, could still be deduced qualitatively from reflection mode EA measurements.