Laser induced oxidation for growth of ultrathin gate oxide

A novel technique for the growth of ultrathin SiO2 at room tempe rature using a pulsed laser has been demonstrated. It is observed that, after an initial high growth rate, the oxide thickness reduces with time and the quality of the oxide improves. The results of our experiments show that this technique can be used to grow high quality ultrathin SiO2 films with excellent control suitable for ULSI MOSFETs.