Heat flow resistance measurements of silicon p⁺-v-n⁺ diodes under forward and reverse biased conditions

A detailed study of the heat flow resistance measurements in a p+-v-n+ diode is studied in both forward and reverse biased conditions. Measurements are made by continuously switching the diode from the power dissipation state into the temperature measuring state. Safe operating power limits are identified for the diodes depending upon their mode of operation either as a microwave switch or as an IMPATT oscillator. © 1985.