Reactive ion etching of GaN using SF<inf>6</inf>+N<inf>2</inf>/Ar

Reactive Ion Etching (RIE) of GaN using SF6+N2/Ar plasma is studied. The dependence of etch rate on gas ratio and plasma power is reported. A significant improvement in etch-rate is shown using higher gas ratio of Ar. Ar is suggested as a better alternative to N2 to achieve good etch rates. Schottky characteristics on etched surface show evidence of damage. However, thermal annealing after etching has improved the Schottky characteristics. © 2007 IEEE.