STUDY OF Pb<inf>1 -</inf><inf>x</inf> Sn<inf>x</inf>Te EPITAXIAL FILMS DEPOSITED BY MDE TECHNIQUE.

Epitaxial films of Pb//1// minus //xSn//xTe (LTT) were deposited on (100) KCl substrates at 300, 325 and 350C using Molecular Beam Epitaxial (MBE) technique. RHEED, X-ray and Van der Pauw techniques were employed to study surface structure, single crystallinity and electrical properties of these films respectively. The resistivity of these films was found to decrease from 10** minus **2 OMEGA -cm at 300K to 10** minus **3 OMEGA -cm at 100 K. The mobility was found to increase with lowering of temperature in the range 10**2 cm**2/V sec at 300 K and 10**3 cm**2/V sec at 100 K.