Improved photoelectrochemical performance of ultra thin g-C<inf>3</inf>N<inf>4</inf>nanosheet: A comparative study from bulk to nanoscale

Ultrathin g-C3N4 (g-CN) nanosheets are prepared by a two-step thermal exfoliation process in an air atmosphere. X-ray diffraction pattern (XRD) shows that ultrathin g-CN nanosheets have the same crystal structure as that of the bulk g-CN with a slight shift in the peak positions due to the reduction of sheet thickness. Field emission scanning electron microscope (FESEM) images show that the bulk g-CN is converted into ultrathin g-CN nanosheets due to thermal oxidation in an atmosphere, which increases the number of reactive active sites for water splitting. Due to a reduction in sheet thickness of g-CN, quantum confinement happened and thereby increase the bandgap from 2.88 (bulk g-CN) eV to 3.10 eV (ultrathin g-CN). Steady-state photoluminescence (PL) shows a blue shift, and time-resolve photoluminescence (TRPL) shows that the average lifetime of photogenerated charge carrier increases when bulk g-CN is converted into ultrathin g-CN nanosheets. Enhancement in photoelectrochemical performance is observed in ultrathin g-CN nanosheets compared to bulk g-CN due to the increased average lifetime of photogenerated charge carriers and a large number of reactive active sites.