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Analytical model for conduction and valence band edge profiles of nonuniformly doped, bandgap graded and displaced heterojunctions
Date Issued
01-01-2000
Author(s)
Reddy, K. Venkateswara
Indian Institute of Technology, Madras
Abstract
An analytical model has been developed for conduction band edge profile of nonuniformly doped, bandgap graded and displaced heterojunctions. Although the results presented are for AlGaAs/GaAs, the model can be applied to any material system. Also the model has been applied to calculate the conduction band edges of different cases with different combinations of Xg and Xd. The model is implemented in SABER simulator for HBT model. The model is extremely useful in the design of heterojunction devices.
Volume
3975