Polysilicon piezoresistive pressure sensor using Silicon-On-Insulator (SOI) approach

In this paper, the design and fabrication of polysilicon piezoresistive pressure sensor are presented. The design considerations such as the membrane thickness and the arrangement pattern of polysilicon piezo-resistors on the membrane are discussed with emphasis on the use of SOI approach. The results obtained on the pressure sensors and the temperature coefficient of resistivity of polysilicon resistors are presented. The results presented include the electrical training of polysilicon resistors for compensating zero offset voltage in the pressure sensors.