Modeling high-frequency noise in SiGe HBTs using delayed minority charge

Based on delayed minority charge high frequency correlated noise in silicon germanium heterojunction bipolar transistor is modeled. Following system theory, the formulated model equations are accurately implemented in Verilog-A using four extra nodes. Results show excellent agreement with numerically simulated data. Simplified model versions are also implemented and tested. Relation between high-frequency correlated noise and non-quasi-static effect is identified through delayed minority charge. © 2011 IEEE.