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Dielectric resonance and magnetic properties of Fe-3 doped BaSnO <inf>3</inf> thin films grown by pulsed laser deposition
Date Issued
01-04-2012
Author(s)
Balamurugan, K.
Senthil Kumar, E.
Ramachandran, B.
Venkatesh, S.
Indian Institute of Technology, Madras
Indian Institute of Technology, Madras
Indian Institute of Technology, Madras
Abstract
Fe-3 doped BaSnO 3 thin films of good crystalline quality with lattice constant a 4.053 Å were grown on (2 0 0) n-type Si substrates by pulsed laser deposition. Micro Raman spectra of the thin films showed the presence of strain-induced Raman modes with reference to that of the bulk polycrystalline Fe-3 doped BaSnO 3. The films exhibited dielectric resonance in the frequency range 20 - 60 MHz and it is explained qualitatively based on the phenomenon of electromechanical piezoelectric resonance. The measured values of the resonant frequency and the surface resistivity showed a strong dependence on the thickness and the crystalline-character of the thin films. Magnetic measurements were performed selectively for the two films having (2 0 0) preferred orientation. It was found that both of them possess ferromagnetic ordering at 300 K and 1.8 K. At 300 K, the inherent diamagnetism of the undoped BaSnO 3 was found to be dominating for higher applied magnetic field. © 2012 American Institute of Physics.
Volume
111