Design and fabrication of 1 GHz lateral TPoS MEMS resonator for RF front end applications

This paper reports on design, fabrication and characterization of laterally excited thin film piezoelectric on Silicon (TPoS) MEMS resonators of resonance frequency around 1 GHz. Devices were fabricated on 5 μm SOI and 0.5 μm Aluminium Nitride piezoelectric film. We studied the effect of the number of anchors attached to the resonator and the width of the resonator on Q-factor and motional resistance. Measured characteristics of the device with Phononic crystal (PnC) tether showed a resonance peak at 969.22 MHz with motional resistance 2.9 kΩ and Q-factor of 1998. The motional resistance could be reduced to 770 Ω for wider devices.