A unified model for gate capacitance-voltage characteristics and extraction of parameters of Si/SiGe heterostructure pMOSFETs

A unified model for gate capacitance-voltage characteristics of Si/SiGe heterostructure pMOSFETs is presented. This model is applicable to buried-channel, surface-channel, and dual-channel Si/SiGe heterostructure pMOSFETs. The results from the model are compared with the experimental results and are found to be in excellent agreement. A simple and accurate method for the extraction of parameters such as the valence band offset, Si cap layer thickness, threshold voltages, and substrate doping is also presented in this paper. © 2007 IEEE.