High-frequency physical equivalent circuit of junction transistors in common collector configurationt

New high-frequency equivalent circuits derived from physical theory have been recently proposed for common-emitter and common-base operations. The analysis is now extended to provide a high-frequency physical equivalent circuit for the common-collector operation. All the constants of the intrinsic transistor ' are expressed as simple functions of one or more of just three physical parameters of the transistor, viz. the base region lifetime, minority carrier transit time in the base and a dimensionless basewidth modulation parameter, A, apart from the quiescent currents in the three leadB of the transistor. © 1973 Taylor and Francis Ltd.