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Grain size dependence of the activation parameters for plastic deformation: Influence of crystal structure, slip system, and rate-controlling dislocation mechanism
Date Issued
01-01-2004
Author(s)
Rodriguez, Placid
Abstract
A critical review of available results on the dependence of grain size on the activation parameters for deformation, specifically, the activation volume, V*, and the thermal component of flow stress, σ*, has been carried out with a view to verifying the Armstrong prediction that identifies the Hall-Petch (H-P) intercept with the easy slip system and the H-P slope with the most difficult system in polycrystals. The influence of slip system choice is demonstrated using results on Cd and Zr. The Armstrong prediction is valid for basal slip hcp metals, such as Cd and Zn, with V* and σ* determined by the difficult pyramidal slip. For the prism slip metals such as Zr and Ti, V* and σ* are controlled by interstitial solutes and are independent of grain size. The results on Zr are used to highlight the influence of dynamic strain aging on the H-P parameters. In bcc metals, in which the Peierls-Nabarro barrier is the rate-controlling obstacle, V* and σ* are again independent of grain size. For fcc metals, correlation of the H-P slope with the cross-slip stress, predicted by the Armstrong model, has been demonstrated for a few cases. The variation of V* with grain size in Ni as reported by Narutani and Takamura (Acta Metall. Mater., 1991, vol. 227, pp. 2037-49) is newly interpreted in terms of the Armstrong model that associates the H-P intercept in fcc metals with dislocation intersections and the H-P slope with cross-slip, and provides realistic results for the activation volumes for the two processes.
Volume
35 A