Publication: Investigation on laser-annealing and subsequent laser-nanotexturing of amorphous silicon (a-Si) films for photovoltaic application
Date
01-06-2010
Authors
Palani, I. A.
Nilesh J Vasa
Singaperumal, M.
Okada, T.
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Abstract
Development of textured crystalline silicon from amorphous silicon film using a pulsed Nd3+:YAG laser is reported. The technique involved is laser annealing and subsequent laser nano texturing by over lapping the laser spot by 50% and 90% of the diameter. Experimental investigations were performed using third (355 nm), second (532 nm) and fundamental harmonics (1064 nm) of the pulsed Nd3+:YAG laser. To investigate the texturization AFM measurement was performed. Absorbance and photoconductivity measurements were performed to analyze the photovoltaic properties of thin films. The process was theoretically analyzed using a 3-D heat transformation model in FEMLAB software. 355 nm laser assisted nano-texturing with 90% overlap showed an improvement in crystalline property and improved textured surface with a higher absorbance as compared to that of 50% overlap.
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Keywords
Amorphous silicon (a-Si), Laser annealing, Laser nano-texturing, Nd : YAG 3+, Photovoltaic application, Polycrystalline silicon