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Charge transport in mixed metal halide perovskite semiconductors
Date Issued
01-02-2023
Author(s)
Senanayak, Satyaprasad P.
Dey, Krishanu
Shivanna, Ravichandran
Li, Weiwei
Ghosh, Dibyajyoti
Zhang, Youcheng
Roose, Bart
Zelewski, Szymon J.
Andaji-Garmaroudi, Zahra
Wood, William
Tiwale, Nikhil
MacManus-Driscoll, Judith L.
Friend, Richard H.
Stranks, Samuel D.
Sirringhaus, Henning
Abstract
Investigation of the inherent field-driven charge transport behaviour of three-dimensional lead halide perovskites has largely remained challenging, owing to undesirable ionic migration effects near room temperature and dipolar disorder instabilities prevalent specifically in methylammonium-and-lead-based high-performing three-dimensional perovskite compositions. Here, we address both these challenges and demonstrate that field-effect transistors based on methylammonium-free, mixed metal (Pb/Sn) perovskite compositions do not suffer from ion migration effects as notably as their pure-Pb counterparts and reliably exhibit hysteresis-free p-type transport with a mobility reaching 5.4 cm2 V–1 s−1. The reduced ion migration is visualized through photoluminescence microscopy under bias and is manifested as an activated temperature dependence of the field-effect mobility with a low activation energy (~48 meV) consistent with the presence of the shallow defects present in these materials. An understanding of the long-range electronic charge transport in these inherently doped mixed metal halide perovskites will contribute immensely towards high-performance optoelectronic devices.
Volume
22