Growth of compressive strained in GaAs/GaAs multiple quantum well structures by MBE

Date Issued
01-07-1997
Author(s)
Sanjeev, S.
Vaya, P. R.
Chua, Soo Jin
Shen, Y.
O'Connor, John
King, V. B.
Abstract
The aim of the present work is to grow compressive strained InGaAs/GaAs quantum well structures and study energy levels in them. Multiple layers of 20 InGaAs/GaAs quantum wells were grown by MBE. The energy for the C1-HH1 transition of the grown structure was measured using Photoluminescence and Electroluminescence. Low energy ion scattering was carried out on the samples to study the depth profile of the multiple quantum wells.
Volume
35