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  1. Home
  2. Indian Institute of Technology Madras
  3. Publication7
  4. Built-in voltage of organic bulk heterojuction p-i-n solar cells measured by electroabsorption spectroscopy
 
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Built-in voltage of organic bulk heterojuction p-i-n solar cells measured by electroabsorption spectroscopy

Date Issued
01-01-2014
Author(s)
Siebert-Henze, E.
Lyssenko, V. G.
Fischer, J.
Tietze, M.
Brueckner, R.
Schwarze, M.
Vandewal, K.
Debdutta Ray 
Indian Institute of Technology, Madras
Riede, M.
Leo, K.
DOI
10.1063/1.4873597
Abstract
We investigate the influence of the built-in voltage on the performance of organic bulk heterojuction solar cells that are based on a p-i-n structure. Electrical doping in the hole and the electron transport layer allows to tune their work function and hence to adjust the built-in voltage: Changing the doping concentration from 0.5 to 32 wt% induces a shift of the work function towards the transport levels and increases the built-in voltage. To determine the built-in voltage, we use electroabsorption spectroscopy which is based on an evaluation of the spectra caused by a change in absorption due to an electric field (Stark effect). For a model system with a bulk heterojunction of BF-DPB and C60, we show that higher doping concentrations in both the electron and the hole transport layer increase the built-in voltage, leading to an enhanced short circuit current and solar cell performance. © 2014 Author(s).
Volume
4
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