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  1. Home
  2. Indian Institute of Technology Madras
  3. Publication4
  4. Plasmon induced brightening of dark exciton in monolayer WSe<inf>2</inf> for quantum optoelectronics
 
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Plasmon induced brightening of dark exciton in monolayer WSe<inf>2</inf> for quantum optoelectronics

Date Issued
20-05-2019
Author(s)
Arora, Ankit
Dixit, Tejendra
Anil Kumar, K. V.
Krishnan, Sivarama 
Indian Institute of Technology, Madras
Lakshmi Ganapathi, K. 
Indian Institute of Technology, Madras
Krishnan, Ananth 
Indian Institute of Technology, Madras
Nayak, Pramoda K.
Ramachandra Rao, M. S.
DOI
10.1063/1.5093664
Abstract
In the present work, we report plasmon induced brightening of dark excitons (XD) in Au nanoparticle (Au-NP) coated monolayer (1L) WSe2. We observed one order enhancement in photoluminescence (PL) intensity and surface enhanced Raman scattering in Au-NP/1L-WSe2 at room temperature (RT). Temperature dependent PL measurements showed enhanced PL emission from RT down to 100 K in contrast to reduced PL emission which is generally observed for pristine 1L-WSe2. We attribute this effect to the out-of-plane electric field induced by the scattering from Au-NPs, which results in the out-of-plane dipole moment and spin-flip of conduction band electrons in Au-NP/1L-WSe2, making XD bright. Our approach provides a facile way to harness excitonic properties in low-dimensional semiconductors, offering simple strategies for quantum optoelectronics.
Volume
114
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