Lower leakage and higher breakdown voltage for MNOS (Metal-SiN-SiO<inf>2</inf>-Si) structure

A combination of thermal SiO2 and Plasma deposited SiN has been used as a dielectric film on silicon and the performance of these MNOS devices has been compared with MOS (Metal-Oxide-Silicon) and MNS (Metal-Nitride Silicon) structures. It has been observed that the MNOS devices have the best overall performance in terms of low Qf, Dit, leakage current and high breakdown field strength and therefore is very attractive as an alternative dielectric for MOSFETs.