Influence of grit-size and sintering temperature on SiC target during pulsed laser deposition

Date Issued
18-10-2013
Author(s)
Bhimasingu, Venkataramesh
Pannirselvam, Emmanuel
Indian Institute of Technology, Madras
DOI
Abstract
Pulsed laser deposition of SiC thin films on N-type Si (100) substratewas studied by using an Nd3+: YAG laser. SiC target with agrit-count of 500 and sintered at 1600 °C was found suitable. © 2013 IEEE.
Subjects