Instability in resistance and variation of activation energy with thickness and deposition temperature of CdSe<inf>0.6</inf>Te<inf>0.4</inf> thin films deposited at high substrate temperatures

CdSe0.6Te0.4 thin films deposited at high substrate temperatures showed a rapid increase in resistance when exposed to oxygen and atmosphere. This behavior is explained by an oxygen adsorption model. A decrease in activation energy with an increase in thickness and deposition temperature is explained by the fact that the depth of the impurity levels is reduced with an increase in thickness and deposition temperatures. The low activation energy obtained in oxygen or atmosphere heated films is accounted for by the fact that oxygen acceptor levels are very shallow from the conduction band.