Impact of Source/Drain Underlap on the Ballistic Performance of Silicon and Germanium-Tin Nanowire p-MOSFETs

We investigate the effectiveness of source/drain (S/D) underlap regions in limiting the source to drain tunneling (SDT) current in Si and Ge0.96Sn0.04nanowire MOSFETs (NWFETs), using rigorous ballistic quantum transport simulations. Our simulation results indicate that with a carefully chosen length of S/D underlap regions, GeSn p-NWFETs can outperform Si p-NWFETs, despite having a higher component of SDT current in OFF-state.