Publication:
Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters

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cris.virtual.author-orcid0000-0003-4871-2149
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cris.virtual.departmentIndian Institute of Technology, Madras
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cris.virtualsource.author-orcid82f73d72-de58-4388-a01b-d44633ecd35c
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cris.virtualsource.department82f73d72-de58-4388-a01b-d44633ecd35c
dc.contributor.authorMadhusoodhanan, Sachin
dc.contributor.authorTripathi, Awneesh
dc.contributor.authorPatel, Dhaval
dc.contributor.authorMainali, Krishna
dc.contributor.authorKadavelugu, Arun
dc.contributor.authorHazra, Samir
dc.contributor.authorBhattacharya, Subhashish
dc.contributor.authorKamalesh Hatua
dc.date.accessioned2023-09-20T05:05:21Z
dc.date.available2023-09-20T05:05:21Z
dc.date.issued01-07-2015
dc.description.abstractMedium-voltage (MV) SiC devices have been developed recently which can be used for three-phase MV grid tie applications. Two such devices, 15 kV SiC insulated-gate bipolar transistor (IGBT) and 10 kV SiC MOSFET, have opened up the possibilities of looking into different converter topologies for the MV distribution grid interface. These can be used in MV drives, active filter applications, or as the active front end converter for solid-state transformers (SSTs). The transformerless intelligent power substation (TIPS) is one such application for these devices. TIPS is proposed as a three-phase SST interconnecting a 13.8 kV distribution grid with a 480 V utility grid. It is an all SiC device-based multistage SST. This paper focuses on the advantages, design considerations, and challenges associated with the operation of converters using these devices keeping TIPS as the topology of reference. The efficiency of the TIPS topology is also calculated using the experimentally measured loss data of the devices and the high-frequency transformer. Experimental results captured on a developed prototype of TIPS along with its measured efficiency are also given.
dc.identifier.doi10.1109/TIA.2015.2412096
dc.identifier.issn939994
dc.identifier.scopus2-s2.0-84937880113
dc.identifier.urihttps://apicris.irins.org/handle/IITM2023/35765
dc.relation.ispartofseriesIEEE Transactions on Industry Applications
dc.sourceIEEE Transactions on Industry Applications
dc.subjectActive front-end converter (FEC)
dc.subjectmediumvoltage (MV) grid tie application
dc.subjectsilicon carbide (SiC)
dc.subjectsolid-state transformer (SST)
dc.titleSolid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters
dc.typeJournal
dspace.entity.typePublication
oaire.citation.endPage3360
oaire.citation.issue4
oaire.citation.startPage3343
oaire.citation.volume51
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oairecerif.author.affiliationIndian Institute of Technology, Madras
person.affiliation.cityChennai
person.affiliation.cityRaleigh
person.affiliation.id60025757
person.affiliation.id60004923
person.affiliation.nameIndian Institute of Technology Madras
person.affiliation.nameNC State University
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