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  1. Home
  2. Indian Institute of Technology Madras
  3. Publication11
  4. Annealing effect on transport properties of Nd<inf>0.67</inf>Sr<inf>0.33</inf>MnO<inf>3</inf> thin films
 
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Annealing effect on transport properties of Nd<inf>0.67</inf>Sr<inf>0.33</inf>MnO<inf>3</inf> thin films

Date Issued
01-01-2000
Author(s)
M Pattabiraman 
Indian Institute of Technology, Madras
Murugaraj, P.
Rangarajan, G.
Prasad, V.
Subramanyam, S. V.
Sastry, V. S.
Koo, Sang Mo
Rao, K. V.
DOI
10.1007/s12043-000-0076-3
Abstract
Annealing dependence of the lattice parameter, resistivity, magnetoresistance and thermopower have been studied on Nd0.67Sr0.33MnO3 thin films deposited on LaAlO3 and alumina substrates by pulsed laser ablation. Upon annealing at 800°C and 1000°C the lattice constant of the LaAlO3 film tends toward that of the bulk target due to reduction in oxygen vacancies. This results in a metal-insulator transition at temperatures which increase with progressive annealing along with a decrease in the observed low temperature MR. Using a magnon scattering model we estimate the eg bandwidth of the film annealed at 1000°C and show that the magnon contribution to the resistivity is suppressed in a highly oxygen deficient film and gains prominence only upon subsequent annealing. We also show that upon annealing, the polaron concentration and the spin cluster size increases in the paramagnetic phase, using an adiabatic polaron hopping model which takes into account an exchange dependent activation energy above the resistivity peak.
Volume
55
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