Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors

Date Issued
01-02-2003
Author(s)
Ravi, M. R.
Indian Institute of Technology, Madras
Indian Institute of Technology, Madras
DOI
Abstract
It is shown in this work that sulfur passivation followed by a deionized water rinse reduces the dark current of InGaAs-InP PIN photodetectors significantly. This reduction in dark current is shown to be due to reduced recombination at the exposed mesa surface. Detectors with polyimide capping after sulfur passivation showed no degradation in characteristics with time.
Volume
50
Subjects