Structural, magnetic, and magnetoelectric properties of [formula omitted] and [formula omitted] thin films

[formula omitted] and [formula omitted] thin films were prepared by rf magnetron sputtering on oxidized silicon and lead zirconate titanate (PZT) substrates. Both the films were found to crystallize in inverse spinel structure after the annealing was carried out at 1073 K for two hours. Small hysteresis was observed in both the films at 300 K as well as 1.8 K. The magnetoelectric coefficient [formula omitted] is seen to have the largest value at 500 Oe and is 4.07 and [formula omitted] in [formula omitted] and [formula omitted] composite films, respectively. © 2010, American Institute of Physics. All rights reserved.