Magnetization and magneto-transport studies on Fe<inf>2</inf>VAl<inf>1-x</inf>Si<inf>x</inf>

Abstract We report on magnetoresistance, Hall and magnetization measurements of Fe2VAl1-xSix Heusler compounds for x = 0.005, 0.015, 0.02. There is a systematic change in the temperature coefficient of resistance (TCR) from negative to positive as the Si composition is increased. The Hall co-efficient shows that the carriers are electron like and the carrier density increases with Si concentration. Resistance measurements under magnetic field indicate a decreasing behavior under the application of magnetic field at low temperature region (T < 60 K), suggesting the suppression of scattering by magnetic field. Temperature and field dependent magnetization measurements did not show any significant change apart from the fact that the presence of super paramagnetic (SPM) cluster and its ordering at low temperatures. Arrott plot analysis of magnetization versus field also indicates the magnetic ordering with applied field below 60 K.