Effect of barrier width and doping on asymmetric QWIP

In asymmetric quantum well infrared photodetector with intersubband electron transition is studied. It consists of Al0.3Ga0.7As-GaAs-Al0.15Ga0.85 As-Al0.3Ga0.7As asymmetric quantum well and Al0.15Ga0.85As-Al0.3Ga0.7As double barrier resonant tunnel region. The structure is so chosen that three energy levels are formed in quantum well region and transition between E1-E2 and E1-E3 are allowed. This can be used for dual band detection. Effect of barrier width on tunneling coefficient, dark current, photo current and generation recombination (g-r) noise are studied. Effect of doping on dark current, photocurrent, g-r noise, photon noise and johnson noise are also studied. Dark current, Photocurrent and g-r noise vary with doping and barrier width.