Comparison of heterostructure emitter bipolar transistors and heterojunction bipolar transistors using an analytical model

An analytical Thermionic-Field- Diffusion Model for the current transport in a Heterostructure Emitter Bipolar Transistor (HEBT) is presented for the first time. The results obtained from the model show good agreement with reported experimental data. The performances of HEBTs are compared with corresponding HBTs using the developed model. It is shown that the HEBTs show higher common emitter current gains compared to that of HBTs at the same current density. The effect of the lower bandgap emitter thickness on the current gain of HEBTs is studied.