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Numerical analysis of step junction pvn diode with different lifetime models
Date Issued
01-01-1981
Author(s)
Ramanan, S.
Kakati, D.
Abstract
The importance of the judicious choice of lifetime model in device analysis is discussed and a one‐dimensional, steady‐state numerical analysis of a pvn diode is presented. Two types of lifetime models are used in this analysis. In model I constant values of lifetimes are assigned for the different regions of the device. Results with varying lifetime values in the middle v region are presented and compared. In model II the lifetime varies with injection level and doping level. Results of an analysis with two such models are reported. Suggestions are made regarding a realistic life‐time model. Copyright © 1981 WILEY‐VCH Verlag GmbH & Co. KGaA
Volume
65