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Low temperature behavior of strained-Si n-MOSFETs
Date Issued
01-12-2007
Author(s)
Mahato, S. S.
Maiti, T. K.
Chakraborty, P.
Mitra, D.
Senapati, B.
Indian Institute of Technology, Madras
Sarkar, S. K.
Maiti, C. K.
Abstract
The performance enhancement in strained-Si n-MOSFETs are evaluated as a function of temperature. Mobility modeling at low temperature is reported. SPICE parameters are extracted for strained-Si n-MOSFETs for the first time. © 2007 IEEE.
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