Publication: Lateral self-diffusion of selenium in CuInSe<inf>2</inf> thin films
Abstract
In this paper, we report the results of lateral self-diffusion studies of selenium in polycrystalline CuInSe2 thin films using a radioactive tracer scanning technique. The self-diffusion coefficients were determined in the temperature range 200-400°C; a pre-exponential factor of 5.53 × 10-4 cm2 s-1 and an activation energy of 0.26 ± 0.02 eV were evaluated. The activation energy is attributed to selenium diffusion via grain boundaries. The grain boundary energy was also estimated and was found to decrease with increase of temperature. © 1997 Elsevier Science S.A.
Description
Keywords
Chalcogens, Diffusion, Radioactive tracer techniques, Segregation