Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

The mechanism of reverse gate leakage in AlGaN/GaN high electron mobility transistors was discussed. It was shown that trap-assisted tunnelling dominates below temperature ∼500 K, and direct tunnelling dominates at higher temperatures. The results showed that trap concentration of ∼1013 - 10-3, and trap bandwidth of ∼50%-70% of barrier height located 0.4-0.55 V below the conduction band edge.