RESURF AlGaN/GaN HEMT for high voltage power switching

A novel HEMT configuration based on the RESURF technique is proposed for very high voltage power switching applications. It employs a p-n junction below the 2-DEG channel and two field plates, one extending from the gate and the other from the drain, to distribute the electric field over the gate to drain separation. 2-D simulations indicate a breakdown voltage > 1 KV at on-resistance of ∼1 mΩ-cm2 (neglecting contact resistances) for the device.