Enhanced H<inf>2</inf>evolution through water splitting using TiO<inf>2</inf>/ultrathin g-C<inf>3</inf>N<inf>4</inf>: A type II heterojunction photocatalyst fabricated by in situ thermal exfoliation

Designing a photocatalyst material with reduced recombination of photogenerated charges is one of the most important aspects of hydrogen generation through solar water splitting. Here, we report hydrogen generation using the TiO2/ultrathin g-C3N4 (U-g-CN) heterostructure fabricated using a unique in situ thermal exfoliation process. Multilayer g-CN is converted into U-g-CN having a high surface (∼190 m2/g) area by calcination at ∼550 °C through oxygen-induced exfoliation, which also forms a robust heterostructure with TiO2. In addition, the presence of g-CN also inhibits further growth of TiO2 nanoparticles, thereby retaining a high specific surface area. The presence of U-g-CN causes a redshift (∼0.13 eV) in the absorption edge of heterostructure compared to that of bare TiO2, which extends the light absorption capability. Addition of 40 wt. % of multilayer g-CN to TiO2 shows an enhanced H2 evolution rate, which is ∼15 times and ∼4 times higher compared to that of bare TiO2 and U-g-CN, respectively. Photoluminescence (PL) and time-resolved PL (TRPL) studies indicate a reduced recombination rate of photogenerated charge carriers with an increase in the average lifetime from 10.53 (TiO2) to 13.32 ns (TiO2/U-g-CN40). The interfacial charge transport characteristics studied through impedance spectroscopy reveal a reduced charge transfer resistance at the semiconductor-electrolyte interface, which facilitates faster charge separation due to the heterostructure formation. The band edge positions are estimated through flatband potential from the Mott-Schottky measurements and optical absorption data, indicating a type-II heterojunction. More light absorption and enhanced separation of photogenerated charges at the heterojunction interface lead to better photocatalytic H2 generation.