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Collector-substrate modeling of SiGe HBTs up to THz range
Date Issued
01-11-2019
Author(s)
Saha, Bishwadeep
Fregonese, Sebastien
Panda, Soumya Ranjan
Indian Institute of Technology, Madras
Celi, Didier
Zimmer, Thomas
Abstract
The undesired behavior of the substrate significantly affects the output impedance of the device; hence degrades circuit performance mainly in the high frequency regime. Therefore, for high-speed and RF circuits, collector-substrate modeling has to be sufficiently accurate. In this paper, an improved collector-substrate equivalent circuit model is proposed. The circuit model elements are physics based and are calculated from technological data. The validity of the equivalent circuit has been verified by on-wafer measurements of an SiGe HBT fabricated in B55 technology up to 330 GHz, the highest frequency reported so far for collector-substrate modeling. The proposed substrate network can be considered as an extension of the latest large-signal HICUM model (L2v2.4).