Realization of preferential (100) oriented AlN thin films on Mo coated Si substrate using reactive RF magnetron sputtering

a-axis (100) oriented Aluminium Nitride (AlN) favours transverse acoustic wave applications. We have been able to realize preferential (100) oriented AlN films on Molybdenum (Mo) coated Si substrate using reactive RF magnetron sputtering. X-ray diffraction and Fourier-transform infrared spectroscopy studies reveal the crystallinity, preferred orientation and bond formation between Al and N2. Al 2p subpeak at 73.8 eV and N 1s subpeak at 396.6 eV from X-ray photoelectron spectroscopy studies confirm the Al-N and N-Al formation in wurtzite hexagonal phase. From the fabricated Mo-AlN-Mo capacitors, the measured dielectric constant and electrical resistivity were (~18) and (~7.5 × 106 Ω.m) respectively. The piezoelectric coefficient d33(eff) of AlN film was (~4.5) pmV−1. These excellent properties of preferential (100) AlN/Mo films will be very useful for high frequency resonator and energy harvesting applications.