A model to study the effect of selective anodic oxidation on ultrathin gate oxides

In this paper, we have studied the effect of selective anodic oxidation on ultrathin (22-31Å ) silicon dioxide grown at different temperatures ranging from 600 °C to 875 °C, on both p- and n-type substrate. A model based on the concept of filling of pinholes by selective anodic oxidation is presented to quantitatively explain the reduction in the gate leakage current of the MOS capacitors after selective anodic oxidation. © 2005 IEEE.