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On the electrical resistivity of chevrel phases
Date Issued
01-12-1979
Author(s)
Sunandana, C. S.
Abstract
The diverse and anomalous electrical resistivity behaviour of binary and ternary chevrel phases AxMo3X4 (A=Cu, Pb, Zn, etc; 0<or=x<or=2; X=S, Se, Te) is discussed. The saturation model is applied to analyse resistivity data obtained with Mo3Se4 and CuMoSe4, in which the high-temperature resistivity is attributed to a conduction-electron mean-free path comparable to the lattice spacing. The low-temperature resistivity of these materials shows a T2 dependence characteristic of electron-phonon scattering.
Volume
12