Study of random dopant fluctuation effects in fully depleted silicon on insulator MOSFET using analytical model

Rao, Rathnamala; Katti, Guruprasad; Nandita  DasGupta; Amitava Das  Gupta

doi:10.1109/EDST.2009.5166108

Study of random dopant fluctuation effects in fully depleted silicon on insulator MOSFET using analytical model

Date Issued

01-12-2009

Author(s)

Rao, Rathnamala

Katti, Guruprasad

Nandita DasGupta

Indian Institute of Technology, Madras

Amitava Das Gupta

Indian Institute of Technology, Madras

DOI

10.1109/EDST.2009.5166108

Abstract

The effect of random dopant fluctuation in the channel of a fully depleted SOI-MOSFET is investigated using analytical models for threshold voltage and subthreshold current. Analytical models are based on solving 2D Poisson's equation considering non-uniformly doped channel. Since analytical models are faster compared to numerical simulations, a large number of devices can be simulated. ©2009 IEEE.

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Study of random dopant fluctuation effects in fully depleted silicon on insulator MOSFET using analytical model