An improved analytic solution to surface potential for un-doped surrounding-gate MOSFET

Compact modeling of Surrounding-Gate (SRG) MOSFETs involve the solution of an implicit equation. In this brief we propose a simple, computationally efficient and numerically robust solution to the implicit equation. By suitably conditioning the implicit equation and thereafter using appropriate correction terms we derive a simple yet highly accurate solution, without employing any smoothing function or empirical relation. We also show that the proposed model is applicable to all regions of operation, unlike previous models.